| PART |
Description |
Maker |
| CMLT341011 CMLT7410LEADFREE |
SURFACE MOUNT DUAL LOW VCE(SAT) SILICON TRANSISTORS
1000 mA, 25 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR
|
Central Semiconductor Corp
|
| BC161-10 BC161-16 BC160 BC160-10 BC160-16 BC161 |
PNP medium power transistors 1000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-39
|
PHILIPS[Philips Semiconductors]
Philipss
NXP Semiconductors N.V.
|
| BSM300GA100D BSM300GA120D BSM100GB100D BSM100GB120 |
300 A, 1000 V, N-CHANNEL IGBT
300 A, 1200 V, N-CHANNEL IGBT
100 A, 1000 V, N-CHANNEL IGBT
100 A, 1200 V, N-CHANNEL IGBT
75 A, 1000 V, N-CHANNEL IGBT
200 A, 1000 V, N-CHANNEL IGBT
50 A, 1600 V, N-CHANNEL IGBT
|
INFINEON TECHNOLOGIES AG
SIEMENS A G
|
| BC369ZL1G BC368 BC368_05 BC368G BC368ZL1 BC368ZL1G |
Amplifier Transistor PNP Silicon(硅PNP放大器晶体管) 1000 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
Voltage and Current are Negative
|
ONSEMI[ON Semiconductor]
|
| BC369 BC369_3 BC369-16 BC369-25 |
DIODE ZENER SINGLE 1000mW 4.7Vz 53mA-Izt 0.05 10uA-Ir 1Vr DO41-GLASS 5K/AMMO 1000 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
From old datasheet system
PNP medium power transistor
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| 2SB1331T105/PQ 2SB1306/P 2SB1306T103/QR 2SB1306/QR |
2 A, 32 V, PNP, Si, POWER TRANSISTOR
5 A, 20 V, PNP, Si, POWER TRANSISTOR, TO-92L
2000 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92L
1000 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92L
700 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92L
100 mA, 400 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92L
1000 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92L
700 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92LS
|
|
| MTB1N100E_D ON2398 MTB1N100E |
TMOS POWER FET 1.0 AMPERES 1000 VOLTS 1 A, 1000 V, 9 ohm, N-CHANNEL, Si, POWER, MOSFET
From old datasheet system
|
Motorola Mobility Holdings, Inc.
ON Semi
MOTOROLA[Motorola, Inc]
|
| MTY14N100E_D ON2710 MTY14N100E MTY14N100 MTY14N100 |
TMOS POWER FET 14 AMPERES 1000 VOLTS RDS(on) = 0.80 OHM TMOS14安培，功率场效应晶体000伏特的RDS（on）\u003d 0.80欧姆
TMOS POWER FET 14 AMPERES 1000 VOLTS RDS(on) = 0.80 OHM 14 A, 1000 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
From old datasheet system
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement Mode Silicon Gate
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
ON Semiconductor
|
| CFB810 |
60.000W Medium Power PNP Plastic Leaded Transistor. 110V Vceo, 8.000A Ic, 1000 hFE.
PNP SILICON PLASTIC POWER DARLINGTON TRANSISTOR
TRANSISTOR | BJT | DARLINGTON | PNP | 110V V(BR)CEO | 8A I(C) | TO-220FP
|
Continental Device India Limited
|
| 2SC1740SLNTP/S 2SA933ASLNTP/RS 2SA933ALNT93/RS 2SC |
150 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
150 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
200 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR
3000 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
50 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
1000 mA, 32 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
500 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR
50 mA, 120 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
1000 mA, 15 V, NPN, Si, SMALL SIGNAL TRANSISTOR
50 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
5000 mA, 15 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
|
Lattice Semiconductor, Corp.
MERITEK Electronics, Corp.
|
| MTP3N100E MTP3N100E_D ON2598 3N100E MTP3N100E-D |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
From old datasheet system
TMOS POWER FET 3.0 AMPERES 1000 VOLTS RDS(on) = 4.0 OHM
3 A, 1000 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
MOTOROLA[Motorola, Inc]
Motorola, Inc.
ON SEMICONDUCTOR
|
| CTLT7410-M621TR |
1000 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR
|
CENTRAL SEMICONDUCTOR CORP
|
|
